发明名称 |
SUBSTRATE TREATMENT APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To improve a temperature controlability of a hot body for heating a reactant gas supplied to a reaction chamber, in a substrate treatment apparatus for treating a substrate with the gas, which arranges the hot body in the upstream of the substrate to be treated. SOLUTION: This substrate treatment apparatus comprises several hot bodies 41 and 42 for heating the gas, each capable of controlling the own temperature, in the reaction chamber 1.
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申请公布号 |
JP2003034870(A) |
申请公布日期 |
2003.02.07 |
申请号 |
JP20010224605 |
申请日期 |
2001.07.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
OSUMI NAOTO;TOYODA KAZUYUKI;SHIMA NOBUHITO |
分类号 |
H05B3/00;C23C16/46;H01L21/205;(IPC1-7):C23C16/46 |
主分类号 |
H05B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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