发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve a temperature controlability of a hot body for heating a reactant gas supplied to a reaction chamber, in a substrate treatment apparatus for treating a substrate with the gas, which arranges the hot body in the upstream of the substrate to be treated. SOLUTION: This substrate treatment apparatus comprises several hot bodies 41 and 42 for heating the gas, each capable of controlling the own temperature, in the reaction chamber 1.
申请公布号 JP2003034870(A) 申请公布日期 2003.02.07
申请号 JP20010224605 申请日期 2001.07.25
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OSUMI NAOTO;TOYODA KAZUYUKI;SHIMA NOBUHITO
分类号 H05B3/00;C23C16/46;H01L21/205;(IPC1-7):C23C16/46 主分类号 H05B3/00
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