| 发明名称 |
METHOD FOR MANUFACTURING HIGH MELTING POINT METAL WIRING LAYER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high melting point metal wiring layer improved so as to allow fine wiring to be formed without using a mask. SOLUTION: The method for manufacturing the high melting point metal wiring layer comprises a step of forming a gate oxide film 2 on a semiconductor substrate 1. The method further comprises a step of forming a silicon layer 10 on the film 2, a step of forming a high melting point metal layer 11 on the layer 10, a step of forming a mixing layer 13 of the layer 10 and the metal layer 11, steps of removing the layer 10 and the layer 11 by etching and forming a wiring layer and a step of heat-treating the wiring layer. |
| 申请公布号 |
JP2003037082(A) |
申请公布日期 |
2003.02.07 |
| 申请号 |
JP20010222741 |
申请日期 |
2001.07.24 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KIDO SHIGENORI;KISHIDA TAKESHI |
| 分类号 |
H01L21/336;H01L21/265;H01L21/266;H01L21/28;H01L21/3205;H01L21/3213;H01L21/768;H01L23/52;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/28;H01L21/320;H01L21/321 |
主分类号 |
H01L21/336 |
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