发明名称 |
PHOTORESIST RESIDUE REMOVING SOLUTION COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a photoresist residue removing solution composition which is excellent in power to remove photoresist residue remaining after dry etching in a process for producing a semiconductor circuit element and does not attack a wiring material, an interlayer dielectric film, etc. SOLUTION: The photoresist residue removing solution composition contains a blend of a photoresist residue removing component with one or more compounds selected from the group comprising vinylcarboxylic acid polymers and their salts. |
申请公布号 |
JP2003035963(A) |
申请公布日期 |
2003.02.07 |
申请号 |
JP20010223305 |
申请日期 |
2001.07.24 |
申请人 |
KANTO CHEM CO INC |
发明人 |
ISHIKAWA NORIO;OWADA HIROHISA |
分类号 |
G03F7/42;H01L21/027;H01L21/302;H01L21/3065;H01L21/308;(IPC1-7):G03F7/42;H01L21/306 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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