发明名称 PHOTORESIST RESIDUE REMOVING SOLUTION COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a photoresist residue removing solution composition which is excellent in power to remove photoresist residue remaining after dry etching in a process for producing a semiconductor circuit element and does not attack a wiring material, an interlayer dielectric film, etc. SOLUTION: The photoresist residue removing solution composition contains a blend of a photoresist residue removing component with one or more compounds selected from the group comprising vinylcarboxylic acid polymers and their salts.
申请公布号 JP2003035963(A) 申请公布日期 2003.02.07
申请号 JP20010223305 申请日期 2001.07.24
申请人 KANTO CHEM CO INC 发明人 ISHIKAWA NORIO;OWADA HIROHISA
分类号 G03F7/42;H01L21/027;H01L21/302;H01L21/3065;H01L21/308;(IPC1-7):G03F7/42;H01L21/306 主分类号 G03F7/42
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