| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring a concentration of boron which can simply and easily analyze boron in an environmental atmosphere adsorbed on a surface of a wafer in a short time, and a method for evaluating a boron level in the environmental atmosphere which can easily evaluate the boron level in the environmental atmosphere. SOLUTION: In the method for measuring the concentration of boron adsorbed on the surface of the semiconductor silicon wafer from the environmental atmosphere to which the semiconductor silicon wafer is directly exposed, an oxide film is formed on the surface of the silicon wafer by a wet process after the oxide film is removed from the surface of the silicon wafer, the silicon wafer is exposed to the environmental atmosphere to be evaluated for the predetermined period of time, the oxide film on the surface of the silicon wafer is etched, and boron in etching solution is measured.
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