发明名称 RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR MANUFACTURING THIN FILM THEREWITH
摘要 PROBLEM TO BE SOLVED: To provide an aluminum raw material for CVD, which matches with various CVD methods, and a method for manufacturing an aluminum-based thin film with the raw material. SOLUTION: The raw material for chemical vapor deposition includes an aluminum compound expressed by general formula (I): (wherein, either of R1 or R2 expresses a 1-4C alkyl group, the other expresses a hydrogen atom or a 1-4C alkyl group, (A) expresses a 1-4C alkylene group, and R2 expresses a 1-8C alkyl group, which may include an oxygen atom in the chain).
申请公布号 JP2003034868(A) 申请公布日期 2003.02.07
申请号 JP20010221646 申请日期 2001.07.23
申请人 ASAHI DENKA KOGYO KK 发明人 ONOZAWA KAZUHISA;YOSHINAKA ATSUYA;YAMADA NAOKI;SAKURAI ATSUSHI
分类号 C07F5/06;C23C16/20;C23C16/40;H01L21/28;H01L21/285;(IPC1-7):C23C16/20 主分类号 C07F5/06
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