| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a plurality of transistors having the same characteristics on the same semiconductor substrate and its manufacturing method. SOLUTION: The areas of a gate oxide films 2a, 2b of two transistors are set the same, and side areas of sixth metal-wiring layers 15a, 15b which are exposed due to being the uppermost layers are also set the same in a metal- wiring forming process carried out by a plasma treatment such as a plasma etching. Thereby, the above antenna ratios become the same between the pairing transistors, and plasma-caused damages made from the sides of the sixth metal- wiring layers 15a, 15b to the gate oxide films 2a, 2b can be also set the same between both of the transistors.
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