| 摘要 |
PROBLEM TO BE SOLVED: To provide a post-processing method of metal wiring for semiconductor element in which the reliability of the wiring can be enhanced by using an aluminum oxide as the protective layer for the wiring. SOLUTION: The post-processing method of metal wiring formed on a substrate in an arbitrary pattern comprises a step for forming aluminum of a specified thickness on the entire surface of a substrate deposited with the metal wiring, a step for changing the aluminum into a bottom barrier layer of aluminum oxide by performing plasma processing under specified process conditions, and a step for forming an interlayer insulation layer over the entire surface at the upper part of the bottom barrier layer.
|
