COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To overcome a problem that the linearity between an input signal and an output signal is deteriorated due to a trap level in the surface of a semiconductor in a compound semiconductor field effect transistor. SOLUTION: A titanium oxide film 5 and a SiN film 6 are formed on the surface of the compound semiconductor field effect transistor. The titanium oxide film 5 can reduce the surface trap level. Hereby, distortions at higher frequencies and in larger amplitude signals can be reduced.