MONITOR, ITS MANUFACTURING METHOD AND DEVICE, AND METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a monitor for evaluating a product which can be used well without being adhered to a susceptor when a silicon epitaxial wafer is produced by vapor phase epitaxy. SOLUTION: A chip T obtained by dicing a silicon single crystal wafer W is beveled at least on the rear surface side thereof, thus forming a monitor M. On the major surface of the monitor M, a silicon epitaxial layer is formed by vapor phase epitaxy along with a silicon single crystal wafer W for product. Subsequently, the thickness, resistivity, and the like, of the silicon epitaxial layer in the monitor M are measured, thus evaluating the characteristics of the silicon single crystal wafer W for product.