| 摘要 |
PURPOSE: To provide a magneto-resistance effect film which has large magneto- resistance effect and a memory which uses it. CONSTITUTION: A 1st magnetic film 111, a nonmagnetic film 112, and a 2nd magnetic film 113 are formed, a magnetic area 114 which has a larger spin polarizability than the 2nd magnetic film 113 and is granular is formed on the interface between the nonmagnetic film 112 and 2nd magnetic film 113, and the granular magnetic area 114 and the 1st magnetic film 111 are exchange- coupled. Here, the granular magnetic area 114 is formed of a material which has its magnetism deflected from the direction vertical to the film surface shape anisotropy and has the demagnetizing field energy larger than the vertical magnetic anisotropic energy. |
