| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a device having high yield and high performance by effectively introducing word line redundancy and enabling stable write-in and verifying. SOLUTION: This semiconductor memory is provided with a plurality of word lines, a plurality of bit lines, a plurality of non-volatile memory cells constituted of MIS transistors which are provided at intersection points of each word line and each bit line respectively and can be controlled electrically by external threshold voltage, a write-in circuit wiring data in a memory cell positioned at an intersection of a selected word line and a selected bit line, and a sense amplifier 107 detecting data held in the memory cell and outputting it. And a discrimination current of the sense amplifier is varied by combination turning on two load transistors of which the size are different, three processing states of normal data read-out processing, verify-processing in erasure, and verify-processing in write-in are performed.</p> |
