| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a low electrical resistance and its manufacturing method to reduce an interlayer capacitance and realize etching with a less reaction product, by determining the etching end point not by using a high selection ratio, but by more precisely controlling the detection of etching end point. SOLUTION: The semiconductor device has a lower layer interconnection, an interlayer insulating film with a connection hole that reaches the lower layer interconnection, and a upper layer interconnection buried in the interlayer insulating film. The interlayer insulating film is formed by stacking an insulating film that includes impurities for the first etching end point detection, an insulating film that includes impurities for the second etching end point detection and a second insulating film in order.</p> |
