| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having fine pads at fine intervals, and a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device comprises a process for forming an opening 2 in the interlayer insulation film 1 on a semiconductor substrate, a process for forming a metal film 6 in the opening 2, a process for forming passivation layers 7, 8 on the metal film 6 and the interlayer insulation film 1, a process for exposing the upper surface of the metal film 6 by arranging an opening 9 in the passivation layers 7, 8, a process for forming a low melting point metal film 10 on the exposed upper surface of the metal film 6 and the upper surface of the passivation layers 7, 8, and a process for agglutinating the low melting point metal film 10 on the metal film 6 by heating at a higher temperature than the melting point of the low melting point metal film 10.</p> |
