| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thick film material of bismuth substituted-type garnet which reduces a saturated magnetic field as maintainingθF/ T of nearly the same level, and which has a magnetization reversal temperature of <=-40 deg.C, provide a manufacturing method for the material, and provide a Faraday rotator. SOLUTION: The thick film material of bismuth substituted-type garnet is grown on a garnet single crystal by a liquid-phase epitaxial growth method and contains Gd, Yb, Fe, Al, and Ga as main components. The composition of the main components is expressed by the general formula, Gd3-a-b Yba Bib Fe5-x-y Alx Gay O12 (wherein, 0<a<=0.5, 0.85<=b<=1.55, 0.15<=x+y<=0.55, 0<y<=0.15). Furthermore, the material contains boron oxide (B2 O3 ) and lead oxide (PbO) 0-4.0 wt.% (excluding 0) each.</p> |
