发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY, AND INFORMATION DEVICE
摘要 PURPOSE: To easily increase the number of combinations of capacitors of a finely-divided memory bank without greatly increasing address signals and address signal lines. CONSTITUTION: An address signal Abuf is inputted to an address inversion section 19 from an input buffer 11, the logic value of a specific bit of the input signal is inverted or non-inverted and outputted to an address control circuit 12.
申请公布号 KR20030011253(A) 申请公布日期 2003.02.07
申请号 KR20020036987 申请日期 2002.06.28
申请人 SHARP CORPORATION 发明人 FUKUI HARUYASU;MORI YASUMICHI;SUMITANI KEN;TANAKA YUJI
分类号 G11C16/02;G11C8/12;G11C16/08;(IPC1-7):G11C16/02 主分类号 G11C16/02
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