发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY, AND INFORMATION DEVICE |
摘要 |
PURPOSE: To easily increase the number of combinations of capacitors of a finely-divided memory bank without greatly increasing address signals and address signal lines. CONSTITUTION: An address signal Abuf is inputted to an address inversion section 19 from an input buffer 11, the logic value of a specific bit of the input signal is inverted or non-inverted and outputted to an address control circuit 12.
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申请公布号 |
KR20030011253(A) |
申请公布日期 |
2003.02.07 |
申请号 |
KR20020036987 |
申请日期 |
2002.06.28 |
申请人 |
SHARP CORPORATION |
发明人 |
FUKUI HARUYASU;MORI YASUMICHI;SUMITANI KEN;TANAKA YUJI |
分类号 |
G11C16/02;G11C8/12;G11C16/08;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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