METHOD FOR FABRICATING GATE ELECTRODE IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING CELL GATE ELECTRODE IN NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a gate electrode in a semiconductor device is provided to control an increase of the thickness of a gate oxide layer caused by a bird's beak while reducing an interval of process time by injecting chlorine-containing gas together with oxygen gas as an oxidant to perform a re-oxidation process. CONSTITUTION: A preliminary gate electrode in which a gate oxide layer pattern(42) and a conductive layer pattern(44) are stacked is formed on a semiconductor substrate(40). Oxygen gas and chlorine-containing gas are supplied to the resultant structure to form an oxide layer(50) on the semiconductor substrate and the preliminary gate electrode while controlling the increase of the thickness of the gate oxide layer pattern. A re-oxidation process for curing the damage of the semiconductor substrate and the sidewall of the conductive layer pattern is performed in forming the preliminary gate electrode.