| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a pad having a passivation structure of high resistance to water and high reliability. SOLUTION: The semiconductor device includes a semiconductor substrate on which a desired element region is formed, an electrode pad formed so as to contact the semiconductor substrate surface or a wiring layer formed on the semiconductor substrate surface, and a bump formed on the electrode pad surface via a middle layer, and further includes a resin insulating film formed at least on the peripheral portion of the bump so as to cover the interface between the bump and the middle layer, which is exposed on the sides of the bump. |
