| 摘要 |
<p>PROBLEM TO BE SOLVED: To comparatively easily manufacture an optoelectronic board for constituting an optoelectronic device such as a liquid crystal display, and to manufacture a comparatively high-performance transistor. SOLUTION: The optoelectronic board (200) is provided with a P-channel type first transistor (30) for pixel switching which has a complete depletion type first channel layer (1a) consisting of a first single crystal semiconductor layer formed on a board (10), and circumference circuits (101, 104, 118) including a P-channel type second transistor having a complete depletion type second channel layer which is disposed in a circumferential region and consists of a second single crystal semiconductor layer. The first and second single crystal semiconductor layers consist of the same layer formed on an insulator layer, and have the same thickness.</p> |
