NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory of a batch erasure type in which usage efficiency of a flash memory cell is improved by redundancy constitution having good efficiency. SOLUTION: This memory is provided with a block 115 for redundancy replacement provided in a memory cell array 103 by at least one in an erasure block unit to store information in a cell block 114a, a redundant address storing section 104 for storing an address of a defective cell block, and a replacement control section 110 replacing and controlling data of a defective cell block by information stored in a redundancy replacement storing section.