发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To perform high speed operation and to drive a device with low power consumption. SOLUTION: A memory cell 100 has a data holding circuit and four transfer gates 103a, 103b, 104a, and 104b, source terminals or drain terminals of the transfer gates 103a and 103b are connected to a pair of bit lines 105a and 105b to which the memory cell 100 is connected, source terminals or drain terminals of the transfer gates 104a and 104b are connected to a pair of bit lines 115a and 115b connected to a memory cell 110 being adjacent to the memory cell 100 in the row direction.</p>
申请公布号 JP2003036677(A) 申请公布日期 2003.02.07
申请号 JP20010220538 申请日期 2001.07.19
申请人 SHARP CORP 发明人 MAKINO HARUHISA
分类号 G11C11/41;(IPC1-7):G11C11/41 主分类号 G11C11/41
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