发明名称 INPUT CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide an input circuit for a semiconductor memory provided with a input circuit having a clock selecting section. SOLUTION: A clock selection circuit 210 receives an internal clock signal before a data strobe signal is enabled. An input circuit 200 is provided with a plurality of input buffers 203, 205, 207, the clock selection circuit 210, a calibration circuit 209, and a plurality of data registers 221, 223, 225. The clock selection circuit holds the prescribed first logic level for a fixed time from a time at which a supply power source is supplied first and, after that, receives a selection signal CL1 being a second logic level. When the selection signal CL1 is a first logic level, the clock selection circuit 210 selects the clock signal CLK and outputs it as a first clock signal SCLK, when the selection signal CL1 is a second logic level, the circuit 210 selects a data strobe signal DQS and outputs it as a second clock signal SCLK.</p>
申请公布号 JP2003036674(A) 申请公布日期 2003.02.07
申请号 JP20020126981 申请日期 2002.04.26
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHOI DONG-JUN;DAE-HYUN CHUNG;HWANG SANG-JUN
分类号 G06F1/06;G11C7/10;G11C7/20;G11C7/22;G11C8/18;G11C11/407;G11C11/409;H03K19/0175;(IPC1-7):G11C11/407 主分类号 G06F1/06
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