SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To reduce the size of silicon crystal pastilles at crystallization of amorphous silicon, to which impurities to be acceptors are introduced. SOLUTION: A manufacturing method for a semiconductor device is provided with the process of forming the amorphous silicon on a gate insulating film, the process of introducing acceptor impurities to be the acceptors and crystal growth suppression impurities suppressing the growth of the crystal to the amorphous silicon and the process of crystallizing the amorphous silicon and forming p-type polycrystalline silicon.