| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate length measurement circuit and a gate length measurement method which can measure the gate length accurately by ignoring the effect of measurement errors. SOLUTION: An active region 16' for measurement is formed while being arranged under a gate layer 15 of a MOS transistor 21 being adjacent to an active region 16 in the MOS transistor 21 between third and fourth measurement terminals 3 and 4. Then, gate length in the gate layer 15 is obtained based on a current I and a voltage V that are measured by an ammeter 11 connected between the first and second measurement terminals 1 and 2, and a voltmeter 12 connected between the first and fourth measurement terminals 3 and 4.
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