发明名称 HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device which can reduce a signal transmission loss by stably reducing the piling-up amount of a die- bonding adhesive onto the side face of the semiconductor chip even in a mass production. SOLUTION: This semiconductor device comprises a high frequency circuit board 1 made of a microstrip line and a baseboard 3 for mounting the high frequency circuit board 1. The high frequency circuit board 1 is conductively bonded to the baseboard 3 with an Ag adhesive 2. The printed pattern for the Ag adhesive 2 is designed to be an intermittent figure in a substantially normal direction from the side face of the side where a high frequency transmission channel exists to connect the high frequency circuit board 1 to the external. Hereby, an overflowing Ag adhesive from the high frequency circuit board 1 is more from the side face of the side where the high frequency transmission channel does not exist than from the side face of the side where the high frequency transmission channel exists.
申请公布号 JP2003037120(A) 申请公布日期 2003.02.07
申请号 JP20010221635 申请日期 2001.07.23
申请人 HITACHI LTD 发明人 SASADA YOSHIYUKI
分类号 H01L23/12;H01L21/52;H01P3/08 主分类号 H01L23/12
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