发明名称 MASK FOR CHARGED PARTICLE BEAM EXPOSURE AND CHARGED PARTICLE BEAM ALIGNER
摘要 <p>PROBLEM TO BE SOLVED: To provide a mask for charged particle beam exposure and a charged particle beam aligner in which mechanical strength is high and positioning accuracy of pattern to be exposed is not easily deteriorated. SOLUTION: In the mask for charged particle beam exposure, a plurality of sub field of visions and a supporting part surrounding the periphery of each sub field of vision are provided on a thin film. Moreover, this mask for charged particle beam exposure has a shape of the sub field of vision which is pentagonal or more polygonal, and the support part is formed in matching with the shape of the sub field of vision.</p>
申请公布号 JP2003037039(A) 申请公布日期 2003.02.07
申请号 JP20010221753 申请日期 2001.07.23
申请人 NIKON CORP 发明人 SHIMIZU HIROYASU
分类号 G03F1/20;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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