发明名称 FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To form a deposition film having inclined thickness on a substrate to be film formed. SOLUTION: When forming a deposition film on the substrate to be film formed under a low vacuum condition, a particular region generates in the vicinity of the target 101, in which a concentration of generated plasma originating in sputtered particles suddenly decreases with distance from the target 101. The method for forming the deposition film is characterized by disposing the substrate 103 to be film formed in the above region, so that the face to be film formed may incline against the sputtered face of the target 101, to form a thinner film with distance from the target 101.
申请公布号 JP2003034866(A) 申请公布日期 2003.02.07
申请号 JP20010222976 申请日期 2001.07.24
申请人 CANON INC 发明人 SUZUKI MASATAKA
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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