发明名称 SEMICONDUCTOR MEMORY CIRCUIT
摘要 PURPOSE: To improve software error resistance, without having to increase the number of manufacturing processes. CONSTITUTION: This circuit has an inverter circuit INV1, of which an input terminal is connected to a storage node (a), and an output terminal is connected to a storage node (b), an inverter circuit INV2 of which an input terminal is connected to a storage node (b) and an output terminal is connected to a storage node (a), a nMOS transistor NM1 of which a gate terminal is connected to the storage node (a), a pMOS transistor PM1 of which a gate terminal is connected to the storage node (b), and a nMOS transistor NR1 connecting each drain of the nMOS transistor NM1 and the pMOS transistor PM1 to a read bit line RBL1.
申请公布号 KR20030011232(A) 申请公布日期 2003.02.07
申请号 KR20020032432 申请日期 2002.06.11
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NII KOJI;OKUDA SHOJI
分类号 G11C11/41;G11C7/02;G11C8/16;G11C11/412;G11C11/419;(IPC1-7):G11C11/417 主分类号 G11C11/41
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