SEMICONDUCTOR LIGHT EMITTING ELEMENT, ITS FABRICATING METHOD AND OPTICAL DISC DRIVE

摘要

PROBLEM TO BE SOLVED: To suppress generation of a pit in the quantum well active layer of III nitride semiconductor light emitting element and to enhance injection efficiency of electrons and holes into the quantum well active layer. SOLUTION: A multilayer quantum well active layer 15 comprises, sequentially from the substrate side, three 3 nm thick well layers 151 of GaInN where the mix crystal ratio of In is 0.1, 5 nm thick barrier layers 152 of AlGaN where the mix crystal ratio of Al is 0.02 formed between respective well layers 151, and a 5 nm thick protective layer 153 of AlGaN where the mix crystal ratio of Al is 0.15 formed on the upper surface of the third well layer 151. When the multilayer quantum well active layer 15 is grown by MOVPE method, triethyl gallium is employed as a gallium source.