| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an integrated thin-film photoelectric conversion module of high reliability, which can easily realize high output characteristics. SOLUTION: The integrated thin-film photoelectric conversion module 1 comprises a multilayered film composed of a first electrode layer 3, a semiconductor layer 4, and a second electrode layer 5 laminated sequentially on one main surface of a substrate 2. The multilayered film comprises a cell region, composed of a plurality of photoelectric conversion cells 10 connected in series, a bypass diode region 18, and a connection region 19. The connection region 19 is used not for connecting the bypass diode 18 to the cell 10, if they have been subjected to reverse-bias processing, but for connecting the bypass diode 18 to at least one of the plurality of cells 10 connected in series by back-to-back connection.</p> |
