SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To accelerate a memory read operation which is constituted using a PLED transistor. SOLUTION: A shunt line L, grounded at both ends and electrically connected to a source power line GND, is inserted in a direction orthogonal to the source power line GND of a MISFET Tr1 and noise (potential) surfacing in the source power line GND is released to the ground potential. By releasing the noise surfacing in the source power line GND to the ground potential, reduction of the voltage between the source and drain of the MISFET Tr1 is suppressed.