| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a low-cost data storage device for storing data for a long time and for a portable appliance. SOLUTION: The data storage device (22) includes a cross-point memory array (25) formed on a dielectric substrate material (50). The cross-point memory array comprises first and second sets of transverse electrodes (502, 504), and they are separated by a storage layer (75) including at least one semiconductor layer (72). The storage layer forms a non-volatile memory element (26) at each crossing point of electrodes from the first and the second sets. Each memory element can be switched between a low impedance state and a high impedance state indicating respective binary data states by applying a write-in signal in the form of the prescribed current density through the memory element. Each memory element comprises diode junction (66) formed in the storage layer, at least while in the low impedance state.</p> |
