| 摘要 |
PROBLEM TO BE SOLVED: To provide bonding wire whose high-frequency resistance can be reduced comparing to single-wire bonding wire and that can be applied for connection between a semiconductor element designed for high-frequency and wiring electrodes or the like. SOLUTION: The semiconductor device comprises the semiconductor element 15, a die pad 12B on an organic substrate, which supports the semiconductor element 15, wiring electrodes (12A, 12C) arranged around the die pad 12B or along a side thereof, and boding wires 10 connecting the semiconductor element 15 supported by the die pad 12B and the wiring electrodes (12A, 12C), and the bonding wires 10 have a structure in which two or more of metal wires or/and alloy wires are stranded. Since this structure allows high-frequency current to flow on the skin of the metal wires or/and the alloy wires, the high- frequency resistance can be reduced comparing to the single-wire bonding wire. |
