发明名称 PLASMA TREATMENT APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To form an insulation film which is hard to delaminate in a process vessel in a short time. SOLUTION: The apparatus comprises a process vessel 11 wherein a work piece is placed and a plasma generating means 30 for plasma generation excited by micro wave. Before the work piece is loaded in the vessel 11, plasma is generated to deposit insulation film inside of the vessel 11. Then the work piece is placed in the vessel 11 for processing by generating plasma. The apparatus is also provide with a process control means 50, which controls a process of taking out the work piece from the process vessel 11 and cleaning the work piece by removing an insulating film deposited in the process vessel 11.
申请公布号 JP2003037105(A) 申请公布日期 2003.02.07
申请号 JP20010225564 申请日期 2001.07.26
申请人 TOKYO ELECTRON LTD 发明人 HONGO TOSHIAKI
分类号 H01L21/302;H01L21/3065;H01L21/31;H01L21/316;H01L21/318;(IPC1-7):H01L21/31;H01L21/306 主分类号 H01L21/302
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