| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize highly accurate alignment between mask and wafer using a microscope imaging apparatus. SOLUTION: In this alignment method, a mask is allocated close to a wafer and the mask, and wafer are aligned with an exposing apparatus by transferring a mask pattern formed on the mask to a resist layer on the wafer. A mask mark M (MX, MY) on the mask and a pallet mark MP (MPX, MPY) on the wafer pallet are simultaneously imaged with the microscope imaging apparatus including two pairs of focusing optical systems from the direction orthogonal to the mask and wafer surface to measure two-dimensional position displacement between these marks. The mask and wafer are subjected to relative alignment based on the measured position displacement.</p> |
