| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a device for displaying a flat plane which prevents a point failure caused by a current leakage between a metal electrode and the semiconductor layer of an auxiliary capacitor. SOLUTION: A metal electrode 54 is formed on the semiconductor layer 37 of an auxiliary capacitor through a gate insulating film. The metal electrode 54 is a longitudinal shape and parallel with a scanning line 53, and the respective longitudinal sides of the semiconductor layer 37 of the auxiliary capacitor are positioned at inner side of the respective longitudinal side edges of the metal electrode 54. Both the longitudinal side edges of the semiconductor layer 37 of the auxiliary capacitor are parallel with the metal electrode 54 and are not superposed therewith. During high temperature heat treatment such as annealing, the difference in stress between the metal electrode 54 and the gate insulating film is caused, and even a stress is applied to the gate insulating film, the longitudinal side edges of the metal electrode 54 to which the stress is most strongly applied is not superposed with the semiconductor layer 37 of the auxiliary capacitor, so that the gate insulating film on the semiconductor layer 37 of the auxiliary capacitor is less prone to cause crackings. Current leakage between the semiconductor layer 37 of the auxiliary capacitor and the metal electrode 54 is prevented, thus controlling the generation of point failures.</p> |
