| 摘要 |
PROBLEM TO BE SOLVED: To prevent reduction in the bonding strength of a bonding wire to a metallized wiring layer upon wire bonding. SOLUTION: In the package for airtightly accommodating a semiconductor element 3 within a container made of an insulating substrate 1, having a metallized wiring layer 4 connected by an ultrasonic method with a bonding wire connected to each electrode of the element 3 and of a lid member 2, a metal layer 8 is formed on at least the surface of a region of the metallized wiring layer 4 connected by the ultrasonic method with the bonding wire 5. The metal layer 8 has a root-mean-square waviness height of 240-850 nm in the undulated area of 100 μm square measured with use of an atomic force microscope and has a root-mean-square roughness height of 50-250 nm in a range of 10 μm angle within a range of 100 μm. |
