| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which has a tuning function and provided with an internal power source circuit in which simplification of layout design and stabilization of circuit operation are contrived. SOLUTION: A tuning control circuit 200a comprises fuse elements FS1-FS4 transiting a state from a conduction state to a cut-off state responding to an external program input, signal driving circuits 241-244 driving signal levels of tuning control signals TSa1-TSa4 in accordance with respective states of fuse elements FS1-FSD4. A reference voltage generating circuit generates reference voltage VREFS corresponding to a reference value of memory cell array voltage of this semiconductor memory in accordance with an electric resistance value RS adjusted finely responding to the tuning control signals TSa1-TSa4.
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