| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle analysis apparatus that measures the energy of charged particles that enter a substrate within a plasma treatment apparatus, is accurate and durable, has a withstand voltage of 1 kV or larger between electrodes, and has a strength for withstanding irradiation with plasma for a long time, a manufacturing method that can accurately align each electrode without using any semiconductor processes, and can manufacture the charged particle analysis apparatus easily at low costs, and an analysis method of charged particles using the charged particle analysis apparatus. SOLUTION: After an electrode plate 11, an insulating board 12, an electrode board 21, and an insulating board 22 are overlapped and bonded, a hole section 41 is formed for bonding the electrode board 31 and the insulating board 32. The electrode board is as thick as 1 μm or more, and the insulating board is as thick as 10 μm or more. The electrode board 11 is set to be at the same potential as a silicon wafer 51, the electrode board 21 is set to be at negative potential and the electrode board 31 is set to be at positive potential to the electrode board 11, and a charged particle current is measured by the electrode board 31. |
