| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element, in which the absorption of visible light of a semiconductor active layer is prevented and a thin film transistor and a light-emitting element are formed easily. SOLUTION: For the light-emitting element 10 formed on a substrate 1, an n-type light-emitting layer 3 composed of n-type ZnO and a p-type light-emitting layer 4 composed of p-type ZnO and formed on a lower electrode 2 composed of ZnO and an upper electrode 5 composed of ITO is formed on the p-type light-emitting layer 4. For the thin film transistor 20, which switches the light- emitting element 10, the semiconductor active layer 13 composed of i-type ZnO is formed via an insulation layer 12 composed of SiO2 on a gate 11 composed of ZnO and a drain 15 and a source 16 composed of ITO are formed via a contact layer 14, composed of n-type ZnO on the semiconductor active layer 13. |
