| 摘要 |
PROBLEM TO BE SOLVED: To realize a DRAM of a system in which a device is operated completely by chip area and current consumption being almost same as conventional one and a non-selection word line potential VwL is made a potential being different from an external power source potential. SOLUTION: This DRAM has bit lines and word lines arranged intersecting mutually, a memory cell array having dynamic memory cells consisting of MOS transistors and capacitors arrange and formed at the intersection parts, a decoder for selecting the word line, a word line driving circuit giving a selected word line potential to a word line selected by the decoder and giving a non-selection word line potential to a non-selection word line, and an internal potential generating circuit generating a first power source potential being different from an external power source potential for giving a non-selection word line potential. The non-selection word line is connected to the first power source potential or the external power source potential.
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