| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a method of manufacturing semiconductor devices capable of actively controlling and managing a surface condition of an internal wall in piping for supplying a raw gas, prior to and after the supply thereof. SOLUTION: The apparatus is comprised of a reaction chamber 8 for processing substrates, an evaporator 7 for evaporating a liquid raw material, and a supply piping 11 for supplying an evaporated gas in the evaporator 7 to the reaction chamber 8. The supply piping 11 is provided with an exhaust piping 12 connected thereto in the vicinity of the reaction chamber 8, and with valves 2, 4 which are gas switching means for switching a gas flow between the exhaust piping 12 and the reaction chamber 8. The valve 4 provided between the supply piping 11 and the reaction chamber 8 is installed within 20 cm in the upper stream of the reaction chamber 8, a pipe branch point 13 branching to the exhaust piping 12 is provided within 20 cm in the upper stream of the valve 4, and the valve 2 on the exhaust piping 12 is installed within 20 cm from the pipe branch point 13.
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