Verfahren zum Freilegen von polykristallinen Bereichen auf beschädigten oder strukturell entarteten Oxidinseln in einem Halbleitersubstrat,申请号DE20011007150-传众专利搜索

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发明名称	Verfahren zum Freilegen von polykristallinen Bereichen auf beschädigten oder strukturell entarteten Oxidinseln in einem Halbleitersubstrat
摘要
申请公布号	DE10107150(C2)	申请公布日期	2003.02.06
申请号	DE20011007150	申请日期	2001.02.15
申请人	INFINEON TECHNOLOGIES AG	发明人	BIRNER, ALBERT;SCHUPKE, KRISTIN;MOLL, ANETT;JAKUBOWSKI, FRANK
分类号	C30B33/10;H01L21/66;(IPC1-7):H01L21/66;C30B33/00	主分类号	C30B33/10
代理机构		代理人
主权项
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