| 摘要 |
A semiconductor memory includes a redundant RAM disposed independently of at least one regular RAM, the redundant RAM having redundant memory elements by which defective memory elements of the regular RAM can be replaced, and a control block for selecting either at least the regular RAM or the redundant RAM according to an address applied thereto, and for reading data from a memory cell of the selected RAM specified by the address. A plurality of regular RAMs can be disposed and the redundant RAM includes redundant memory elements by which defective memory elements of an arbitrary one of the plurality of regular RAMs can be replaced. The control block selects either one of the plurality of regular RAMs or the redundant RAM according to an address applied thereto, and reads data from a memory cell of the selected RAM specified by the address.
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