发明名称 |
Predominantly <100> polycrystalline silicon thin film transistor |
摘要 |
A method is provided to produce thin film transistors (TFTs) on polycrystalline films having a single predominant crystal orientation. A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. A gate is formed overlying the polycrystalline film. The polycrystalline film is doped to produce source and drain regions.
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申请公布号 |
US2003025134(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20020253806 |
申请日期 |
2002.09.23 |
申请人 |
VOUTSAS APOSTOLOS |
发明人 |
VOUTSAS APOSTOLOS |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/84;H01L31/062;H01L31/113 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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