Semiconductor device provided with potential transmission line

摘要

A DRAM is provided at a portion relating to generation of a boosted potential with a filter circuit located between a detector circuit and a ring oscillator for removing a pulse-like change in level from an output signal of the detector circuit. Accordingly, temporary stop of the charge pump circuit can be prevented even when the boosted potential exceeds in a pulse-like manner the reference potential at the vicinity of the output node of the charge pump circuit, and the boosted potential can be rapidly restored to the reference potential.