| 发明名称 |
Low emitter resistance contacts to GaAs high speed HBT |
| 摘要 |
A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipolar transistor to realize a lower contact resistance value to yield an improved cutoff frequency (fT).
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| 申请公布号 |
US2003025128(A1) |
申请公布日期 |
2003.02.06 |
| 申请号 |
US20020200892 |
申请日期 |
2002.07.22 |
| 申请人 |
MICROLINK DEVICES, INC. |
发明人 |
PAN NOREN;HAN BYUNG-KWON |
| 分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/45;H01L29/737;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/331 |
| 代理机构 |
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