| 摘要 |
<p>A plasma treating device (15) comprising a treating container (20) that houses a wafer (W) for treating by treating gas plasma, and a susceptor (23) that is provided in the treating container (20) and has at least wafer (W)-mounted surface thereof consisting of an insulator (27). A treating gas is supplied from a gas supplying means (60) into the treating container (20), and a high-frequency power is applied to the susceptor (23) from a high-frequency power source (39). A lower electrode (25) connected to the power source (39) is provided on the susceptor (23), and an exposed electrode (29) connected to the lower electrode (25) is also provided exposed on the susceptor (23).</p> |
