发明名称 |
Method of preparing optically imaged high performance photomasks |
摘要 |
One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
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申请公布号 |
US2003027083(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010912116 |
申请日期 |
2001.07.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FULLER SCOTT;MONTGOMERY MELVIN W.;ALBELO JEFFREY A.;BUXBAUM ALEX |
分类号 |
G03F7/038;G03F1/08;G03F7/039;G03F7/09;G03F7/11;G03F7/16;G03F7/20;G03F7/38;H01L21/027;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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