发明名称 |
Anti-fuse memory cell with asymmetric breakdown voltage |
摘要 |
A memory cell for a two- or a three-dimensional memory array includes first and second conductors and set of layers situated between the conductors. This set of layers includes a dielectric rupture anti-fuse layer having a thickness less than 35 Å and a leakage current density (in the unruptured state) greater than 1 mA/cm2 at 2 V. This low thickness and high current leakage density provide a memory cell with an asymmetric dielectric layer breakdown voltage characteristic.
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申请公布号 |
US2003026157(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010918307 |
申请日期 |
2001.07.30 |
申请人 |
KNALL N. JOHAN;KOUZNETSOV IGOR;VYVODA MICHAEL A.;CLEEVES JAMES |
发明人 |
KNALL N. JOHAN;KOUZNETSOV IGOR;VYVODA MICHAEL A.;CLEEVES JAMES |
分类号 |
G11C17/16;H01L23/525;H01L27/10;(IPC1-7):G11C5/02 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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