| 摘要 |
<p>A semiconductor element comprising a first element formed of a first compound semiconductor layer group (22), and a second element provided on the upper layer of the first compound semiconductor layer group and formed of a second compound semiconductor layer group. The first element is a transistor, and the second element is a Schottky diode. A separation layer that separates the first element from the second element electrically is formed between the first and second compound semiconductor layer groups, and the second compound semiconductor layer group is formed on the first compound semiconductor layer group by an epitaxial growth.</p> |
